Rice University

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Electrical and Computer Engineering

Speaker: Maki Suemitsu
RIEC, Tohoku University

Epitaxial graphene on 3C-SiC thin films on Si substrates: Tuning the bands through crystallographic orientations

Wednesday, February 27, 2013
10:30 AM  to 11:30 AM

1064  George R. Brown Hall
Rice University
6100 Main St
Houston, Texas, USA

By forming a heteroepticaxial layer of 3C-SiC on a Si substrate and by graphitizing the top surface of the film, we can fabricate epitaxial graphene on Si substrates. Surprisingly, graphene forms not only on 3C-SiC(111), which is crystallographically similar to 6H-SiC(0001), but also on 3C-SiC(110) and 3C-SiC(100) films. A sophisticated growth technique even allows us to form graphene on C-terminated 3C-SiC(-1-1-1) film. This variety of crystallographic orientations as well as the easiness to realize these structures are definitely one of the major advantages of our graphene-on-silicon, or GOS, technology, and will enable us to enjoy several electronic properties of graphene on a single chip.

Host: Junichiro Kono

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